document number: 89116 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 19 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount t rans z orb ? transient voltage suppressors smpc5.0a thru smpc36a vishay general semiconductor new product typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial and te lecommunication. sensitive equipment against transient overvoltages. features ? very low profile - typical height of 1.1 mm ? ideal for automated placement ? uni-direction only ? excellent clamping capability ? low incremental surge resistance ? very fast response time ? meets msl level 1, per j-std-020 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition mechanical data case: to-277a (smpc) molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) measured on 8.3 ms single hal f sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum (3) pulse test: 300 s pulse width, 1 % duty cycle t primary characteristics v wm 5.0 v to 36 v p ppm 1500 w p d 6.5 w i fsm 200 a t j max. 150 c to-277a (smpc) a 2 1 esmp ? series cathode 1 cathode 2 anode a maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak power dissipation with a 10/1000 s wavefo rm (fig. 3) p ppm (1)(2) 1500 w peak pulse current with a 10/1000 s waveform (fig. 1) i ppm (1) see next table a peak forward surge current 8. 3 ms single ha lf sine-wave i fsm (2) 200 a power dissipation on infinite heatsink, t a = 50 c p d 6.5 w maximum instandaneous forward voltage at 100 a v f (3) 3.5 v operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89116 20 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 smpc5.0a thru smpc36a vishay general semiconductor new product notes (1) pulse test: t ? 50 ms (2) surge current waveform per fig. 3 and derated per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35 notes (1) mounted on minimum recommended pad layout (2) units mounted on infinite heatsink at t a = 50 c electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage current i r at v wm (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) min. max. smpc5.0a gde 6.40 7.07 10 5.0 1500 150 10.0 smpc6.0a gdg 6.67 7.37 10 6.0 1000 145.6 10.3 smpc6.5a gdk 7.22 7.98 10 6.5 500 133.9 11.2 smpc7.0a gdm 7.78 8.60 10 7.0 200 125.0 12.0 smpc7.5a gdp 8.33 9.21 1.0 7.5 100 116.3 12.9 smpc8.0a gdr 8.89 9.83 1.0 8.0 50 110.3 13.6 smpc8.5a gdt 9.44 10.4 1.0 8.5 20 104.2 14.4 smpc9.0a gdv 10.0 11.1 1.0 9.0 5.0 97.4 15.4 smpc10a gdx 11.1 12.3 1.0 10.0 2.0 88.2 17.0 smpc11a gdz 12.2 13.5 1.0 11.0 2.0 82.4 18.2 smpc12a gee 13.3 14.7 1.0 12.0 2.0 75.4 19.9 smpc13a geg 14.4 15.9 1.0 13.0 1.0 69.8 21.5 smpc14a gek 15.6 17.2 1.0 14.0 1.0 64.7 23.2 smpc15a gem 16.7 18.5 1.0 15.0 1.0 61.5 24.4 smpc16a gep 17.8 19.7 1.0 16.0 1.0 57.7 26.0 smpc17a ger 18.9 20.9 1.0 17.0 1.0 54.3 27.6 smpc18a get 20.0 22.1 1.0 18.0 1.0 51.4 29.2 smpc20a gev 22.2 24.5 1.0 20.0 1.0 46.3 32.4 smpc22a gex 24.4 26.9 1.0 22.0 1.0 42.3 35.5 smpc24a gez 26.7 29.5 1.0 24.0 1.0 38.6 38.9 smpc26a gfe 28.9 31.0 1.0 26.0 1.0 35.6 42.1 smpc28a gfg 31.1 34.4 1.0 28.0 1.0 33.0 45.4 smpc30a gfk 33.3 36.8 1.0 30.0 1.0 31.0 48.4 smpc33a gfm 36.7 40.6 1.0 33.0 1.0 28.1 53.3 smpc36a gfp 40.0 44.2 1.0 36.0 1.0 25.8 58.1 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to ambient air r ? ja (1) 125 c/w typical thermal resistance, junction to leads r ? jl (2) 15 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode smpc5.0a-m3/86a 0.10 86a 1500 7" diameter plastic tape and reel smpc5.0a-m3/87a 0.10 87a 6500 13" diameter plastic tape and reel
document number: 89116 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 21 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 smpc5.0a thru smpc36a vishay general semiconductor new product ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical j unction capacitance t d - p u lse width ( s) 100 1 0.1 0.1 10 10 000 p ppm - peak p u lse po w er (kw) 10 1 100 1000 0.31 x 0.31" ( 8 .0 x 8 .0 mm) copper pad areas n on-repetiti v e p u lse wa v eform sho w n in fig. 3 t a = 25 c t j - initial temperat u re 100 50 0 075 200 peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage ( % ) 75 25 100 150 25 50 125 175 t - time (ms) 150 50 0 0 2.0 4.0 i ppm - peak p u lse c u rrent ( % ) i rsm 100 1.0 3.0 peak val u e i ppm 10/1000 s wa v eform as defined b y r.e.a. half val u e - i ppm i pp 2 t j = 25 c p u lse width (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm t r = 10 s t d re v erse voltage (v) 10 000 100 10 1 10 100 c j - j u nction capacitance (pf) 1000 t j = 25 c f = 1.0 mhz v sig = 50 mv p-p v r meas u red at stand-off voltage v wm v r meas u red at zero bias
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89116 22 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 smpc5.0a thru smpc36a vishay general semiconductor new product package outline dimensions in inches (millimeters) conform to jedec to-277a to-277a ( s mpc) 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) 0.030 (0.75) nom. 0.084 (2.13) nom. 0.155 (3.94) nom. mountin g pa d layout 0.268 (6.80) 0.186 (4.72) min. 0.050 (1.27) min. 0.041 (1.04) 0.055 (1.40) min. 0.189 (4.80) min. 0.187 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.171 (4.35) 0.167 (4.25) a k 2 k 1
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